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Samsung announces DDR 2.0 NAND Flash Chips Boasting 3x Performance Gain

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Samsung announces DDR 2.0 NAND Flash Chips Boasting 3x Performance Gain

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Samsung announced that is is going to be producing DDR (Double Data Rate) 2.0 NAND flash memory chips based on its smallest 20 nanometer architecture. The chips boast a doubling in memory storage upto 64GB and a performance increase of upto three times, over their current DDR 1.0 technology.

 

These chips will be used extensivly in mobile devices like Smartphones, Tablets and SSDs. Equipped with a toggleable DDR 2.0 interface the new 64 GB chips can transmit data at speeds of upto 400 Mbit/sec. DDR 2.0 provides a ten times increase in performance from the current 40 Mbit/sec DDR 1.0 interface. It also triples the performance over current toggleable DDR 1.0 chips which have a throughput of 133 Mbit/sec.

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Anand Kapre
Anand Kapre
A gaming freak, A Computer geek and an important role player at iGyaan.in . He also is a maniac cook( loves his grill) and the founder of minecraft.co.in. Anand is dedicated to testing the devices to their core and finding the useful from the lifeless.